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IRHNME9A3024

Rad hard, 60 V, 25 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 300 krad TID, COTS
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IRHNME9A3024
IRHNME9A3024
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商品详情

  • ESD等级
    Class 1C
  • 最高 ID (@25°C)
    25 A
  • QG
    31 nC
  • 最高 RDS (on) (@25°C)
    30 Ω
  • TID
    300 Krad(Si)
  • VBRDSS
    60 V
  • 最高 VF
    1.2 V
  • 可选TID等级 (kRad(si))
    100 300
  • 封装
    SMD-0.2e
  • 极性
    N
  • 生成
    R9
  • 芯片尺寸
    1, 3
  • 认证标准
    COTS
推荐的
OPN
产品状态 active and preferred
英飞凌封装名称 C-CCN-3
封装名 SMD-0.2E CLID
包装尺寸 N/A
包装类型 N/A
湿度 N/A
防潮包装 N/A
无铅 No
无卤素 Yes
符合RoHS标准 No
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产品状态
Active
英飞凌封装名称 C-CCN-3
封装名 SMD-0.2E CLID
包装尺寸 0
包装类型
湿度 -
防潮包装
无铅
无卤素
符合 RoHS 标准
JANSR2N7650U8CE is a R9 generation, rad hard, single N-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 60 V and 25 A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control and fast switching.

特性

  • SEE hardened up to LET = 90 MeV.cm2/mg
  • Low RDS(on)
  • Low total gate charge
  • Fast switching
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1C (MIL-STD-750, 1020)

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