FF7MR12W1M1H_B17
新品
现货，推荐
符合RoHS标准

FF7MR12W1M1H_B17

新品
EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V
数据手册

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FF7MR12W1M1H_B17
FF7MR12W1M1H_B17
数据手册


商品详情

  • RDS (on) (@ Tj = 25°C)
    5.8 mΩ
  • 封装
    Easy 1B
  • 尺寸 (length)
    62.8 mm
  • 尺寸 (width)
    33.8 mm
  • 应用
    EV Charger, UPS, Solar
  • 拓扑结构
    Half-bridge
  • 特性
    PressFIT
  • 质量等级
    Industrial

推荐的
OPN
FF7MR12W1M1HB17BPSA1
产品状态 active and preferred
英飞凌封装名称 AG-EASY1B
封装名 N/A
封装尺寸 24
封装类型 TRAY
湿度 NA
防潮封装 NON DRY
无铅 No
无卤素 No
符合RoHS标准 Yes
封装产地
DE
晶圆产地
AT

产品状态
Active
英飞凌封装名称 AG-EASY1B
封装名 -
封装尺寸 24
封装类型 TRAY
湿度 NA
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
DE
晶圆产地
AT
EasyDUAL™ 1B 1200 V, 7 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology.

特性

  • CoolSiC™ MOSFET 1200 V
  • Common-source / Kelvin connection
  • Low gate-loop inductance
  • Fast switching capability
  • Low switching losses
  • High current capability
  • PressFIT pins
  • Integrated NTC temperature sensor

产品优势

  • High system efficiency
  • High switching frequency
  • High power density
  • Reduced cooling requirements
  • Improved switching performance
  • Lower EMI
  • More compact converter design
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