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Overview

The 650 V CoolMOS™ CFD7A SJ MOSFETs are specifically optimized to meet the requirements for electric-vehicle applications. CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise. The CoolMOS™ CFD7A family is manufactured on the highly automated 300 mm production line, which contributes to reach the zero-defect target in mass production while fulfilling the growing market demand.

Key features
  • Battery voltages up to 475 V
  • Efficiency improvements up to 98.4%
  • Qualification well beyond AEC-Q101
  • Fast body diode: -30% Qrr (to CFDA)
Applications
DC-DC converter high-voltage
On-board charging (OBC)
Power conversion

Products

About

Experience next-level performance with 650 V CoolMOS™ CFD7A MOSFETs

With more than ten years of automotive experience, CoolMOS™ CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise. Benefit from our 650 V CoolMOS™ N-channel SJ MOSFETs CFD7A by making automotive applications more compact and higher performing. The technology offers highest reliability with automotive lifetime requirements and increased design flexibility and scalability.

Higher power density for more compact designs

Boosting efficiency to the next level, CoolMOS™ CFD7A shows improvements in hard- and resonant-switched topologies, especially in light-load conditions. Compared to the previous generation CFDA, the Coss is reduced by 60 percent, the Eoss by 40 percent, the Qg by 66 percent, the Qrr  by 33 percent, and the Trr by 27 percent. These figures of merit translate in efficient operation are elevated frequencies and smaller passives, filter, and cooling components.

Excellent efficiency and thermal performance

When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. As compared to the D2PAK 3-pin, the Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at converter level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2 mm between drain and source and gate facilitates device usage for higher battery voltage classes up to 475 V.

Highest reliability with increased design flexibility and scalability

 As a result of improved cosmic-radiation robustness, the CoolMOS™ CFD7A technology allows applying higher battery voltages at the same reliability rate as previous generations and other market offerings. The CFD7A devices can be used in PFC and DC-DC stages thanks to the intrinsic fast body diode and the broad portfolio line-up.

Experience next-level performance with 650 V CoolMOS™ CFD7A MOSFETs

With more than ten years of automotive experience, CoolMOS™ CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise. Benefit from our 650 V CoolMOS™ N-channel SJ MOSFETs CFD7A by making automotive applications more compact and higher performing. The technology offers highest reliability with automotive lifetime requirements and increased design flexibility and scalability.

Higher power density for more compact designs

Boosting efficiency to the next level, CoolMOS™ CFD7A shows improvements in hard- and resonant-switched topologies, especially in light-load conditions. Compared to the previous generation CFDA, the Coss is reduced by 60 percent, the Eoss by 40 percent, the Qg by 66 percent, the Qrr  by 33 percent, and the Trr by 27 percent. These figures of merit translate in efficient operation are elevated frequencies and smaller passives, filter, and cooling components.

Excellent efficiency and thermal performance

When using Infineon’s 650 V CoolMOS™ CFD7A technology in combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. As compared to the D2PAK 3-pin, the Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at converter level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2 mm between drain and source and gate facilitates device usage for higher battery voltage classes up to 475 V.

Highest reliability with increased design flexibility and scalability

 As a result of improved cosmic-radiation robustness, the CoolMOS™ CFD7A technology allows applying higher battery voltages at the same reliability rate as previous generations and other market offerings. The CFD7A devices can be used in PFC and DC-DC stages thanks to the intrinsic fast body diode and the broad portfolio line-up.

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